Description: HexaTech has developed a crystal growth process that yields single crystalline aluminum nitride boules ideally suited for the fabrication of high-quality AlN wafers
aluminum nitride (8) crystal growth (8) hexatech (4) ultraviolet led (4) aln substrates (2) power conversion devices (1) high frequency electronics (1)
Established in 2001, HexaTech, Inc. is a recognized world leader in the development and commercialization of the next-generation semiconductor material, aluminum nitride (AlN). This wide bandgap semiconductor offers unique properties which enable the fabrication of first-in-kind devices, including long life ultraviolet (UV-C) light emitting diodes (LEDs) for disinfection applications, deep UV lasers for biological threat detection, high voltage switching devices for efficient power conversion, and radio fre
High-performance III-nitride semiconductor devices, comprised of alloys of (Al, In, Ga)N, currently face a crucial challenge in terms of achievable device quality. Fabricating these devices on lattice-matched, highly thermally conducting, single crystalline AlN wafers enables sophisticated, next-generation III-nitride based devices with vastly superior performance and device lifetimes.
HexaTech has developed a proprietary crystal growth process that yields the world's highest quality single crystalline AlN boules, ideally suited for the fabrication of AlN substrates.